Synaptic behavior of Ni-Co layered double hydroxide-based memristor

The synaptic behavior of the Ni-Co layered double hydroxide-based memristor was demonstrated. The modulation effect of pulse amplitude, duration, and excitation interval on the conductance of memristor is analyzed. On account of analog resistive switching features, and the nonlinear transmission characteristics of synapses, pulse-time-dependent plasticity, long-term/short-term memory, and learning and forgetting behaviors of synapses are simulated and carried out. The analog bipolar resistance switch was ascribed to the formation and breakdown of oxygen filaments formed in Ni-Co layered double hydroxides films. This kind of memristor with an analog resistance switch is very promising to provide an implementation method for the development of electronic synapse function.

Automated summary

The synaptic behavior of the Ni-Co layered double hydroxide-based memristor was demonstrated, and the modulation effect of pulse amplitude, duration, and excitation interval on the conductance of memristor was analyzed. The formation and breakdown of oxygen filaments in Ni-Co layered double hydroxides films were attributed to the analog bipolar resistance switch, showing promising implementation for the development of electronic synapse function.