β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron,sp value of 0.93 GW/cm2

In this paper, we show that high-performance beta -Ga2O3 hetero-junction barrier Schottky (HJBS) diodes with various beta -Ga2O3 periodic fin widths of 1.5/3/5 mu m are demonstrated with the incorporation of p-type NiOx. The beta -Ga2O3 HJBS diode achieves a low specific on-resistance (R-on,R-sp) of 1.94 m Omega cm(2) with a breakdown voltage of 1.34kV at a beta -Ga2O3 periodic fin width of 3 mu m, translating to a direct-current Baliga's power figure of merit (PFOM) of 0.93GW/cm(2). In addition, we find that by shrinking the beta -Ga2O3 width, the reverse leakage current is minimized due to the enhanced sidewall depletion effect from p-type NiOx. beta -Ga2O3 HJBS diodes with p-type NiOx turn out to be an effective route for Ga2O3 power device technology by considering the high PFOM while maintaining a suppressed reverse leakage current.

Automated summary

This paper presents high-performance beta-Ga2O3 hetero-junction barrier Schottky (HJBS) diodes with p-type NiOx, achieving low on-resistance, high breakdown voltage, and a high DC figure of merit while minimizing reverse leakage current by shrinking the width of beta-Ga2O3. The incorporation of p-type NiOx enhances the sidewall depletion effect in beta-Ga2O3 HJBS diodes, making them an effective route for Ga2O3 power device technology with high PFOM and reduced reverse leakage current.