4.6 Article

A hybrid optoelectronic Mott insulator

Journal

APPLIED PHYSICS LETTERS
Volume 118, Issue 14, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/5.0044066

Keywords

-

Funding

  1. U.S. Department of Energy, Office of Science, Basic Energy Sciences [DE-SC0019273]
  2. Spanish Ministry of Science

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The coupling of electronic degrees of freedom in materials to create hybridized functionalities is a goal of modern condensed matter physics, but is limited by intrinsic material properties. A Mott metal-insulator transition can be controlled by doping etc., but not solely by light.
The coupling of electronic degrees of freedom in materials to create hybridized functionalities is a holy grail of modern condensed matter physics that may produce versatile mechanisms of control. Correlated electron systems often exhibit coupled degrees of freedom with a high degree of tunability which sometimes lead to hybridized functionalities based on external stimuli. However, the mechanisms of tunability and the sensitivity to external stimuli are determined by intrinsic material properties which are not always controllable. A Mott metal-insulator transition (MIT) is technologically attractive due to the large changes in resistance, tunable by doping, strain, electric fields, and orbital occupancy but not, in and of itself, controllable with light. Here, an alternate approach is presented to produce optical functionalities using a properly engineered photoconductor/strongly correlated hybrid heterostructure. This approach combines a photoconductor, which does not exhibit an MIT, with a strongly correlated oxide, which is not photoconducting. Due to the intimate proximity between the two materials, the heterostructure exhibits giant volatile and nonvolatile, photoinduced resistivity changes with substantial shifts in the MIT transition temperatures. This approach can be extended to other judicious combinations of strongly correlated materials.

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