Journal
APPLIED PHYSICS LETTERS
Volume 118, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/5.0041808
Keywords
-
Categories
Funding
- Ministry of Science and Technology, Taiwan [MOST 109-2221-E-009-034-MY3]
- NCTU visiting research fellowship program
- EPSRC Programme [EP/R024642/1]
- [H2020-FETPROACT-2018-01]
- EPSRC [EP/R024642/1] Funding Source: UKRI
Ask authors/readers for more resources
Inserting an oxidizable metal diffusion barrier in TaOx-based conducting bridge memristor devices enhances the switching stability and synaptic performances.
An oxidizable metal diffusion barrier inserted between the active metal electrode and the switching layer decreases the electroforming voltage and enhances the switching stability and synaptic performances in TaOx-based conducting bridge memristor devices. The TiW barrier layer avoids an excessive metal ion diffusion into the switching layer, while the TiWOx interfacial layer is formed between the barrier and the switching layer. It modulates the oxygen vacancy distribution at the top interface and contributes to the formation and rupture of the metal ion-oxygen vacancy hybrid conducting bridge. We observe that the device that relies upon non-hybrid (metal ions only) conducting bridge suffers from poor analogous performance. Meanwhile, the device made with the barrier layer is capable of providing 2-bit memory and robust 50 stable epochs. TaOx also acts as resistance for suppressing and a thermal enhancement layer, which helps to minimize overshooting current. The enhanced analog device with high linear weight update shows multilevel cell characteristics and stable 50 epochs. To validate the neuromorphic characteristic of the devices, a simulated neural network of 100 synapses is used to recognize 10 x 10 pixel images.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available