Journal
APPLIED PHYSICS LETTERS
Volume 118, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/5.0047865
Keywords
-
Categories
Funding
- NSF ECCS [1509875]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1509875] Funding Source: National Science Foundation
Ask authors/readers for more resources
The research shows that the growth of NiFe2O4 thin films on MgGa2O4 and ZnGa2O4 substrates varies significantly, with films grown on ZnGa2O4 substrate having near perfect matching and almost no strain, maintaining their cubic structure; while films grown on MgGa2O4 substrate exhibit significant strain.
Nickel ferrite (NiFe2O4) thin films are grown epitaxially on two different isostructural substrates, (100)-oriented MgGa2O4 and ZnGa2O4, using pulsed laser deposition. These spinel substrates have a lattice mismatch of 0.62% and 0.04%, respectively, with NiFe2O4 crystal. While the films grown on MgGa2O4 substrates exhibit significant strain resulting in a tetragonal distortion of the crystal structure, the films on ZnGa2O4 substrate are essentially strain-free and retain their cubic structure because of the near-perfect lattice match. Magnetometry data suggest that film strain is the principal factor determining the anisotropy of these NiFe2O4 films. This is also confirmed by the effective magnetization values obtained from ferromagnetic resonance (FMR) measurements. While there is only a modest decrease in effective Gilbert damping constant with strain reduction, an enhancement in the spin voltage is observed in the spin Seebeck effect (SSE) measurements for NiFe2O4 films grown on ZnGa2O4 substrate with thickness <= 200nm.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available