Spin-orbit torque controllable complete spin logic in a single magnetic heterojunction

The realization of complete spin logic within a single nonvolatile memory cell is a promising approach toward next-generation low-power stateful logic circuits. In this work, we demonstrate that all 16 Boolean logic functions can be realized within a single four-state nonvolatile IrMn/Co/Ru/CoPt magnetic heterojunction, where controllable field-free spin-orbit torque switching of the perpendicularly magnetized CoPt alloy is obtained, relying on the interlayer exchange coupling and exchange bias effect. By assigning different values to four variables of the four-state memory, that is, the initial control current pulse, the initial control magnetic field, and the input electrical potential of two terminals, in sequentially three steps, the complete Boolean logic functions are realized, while the anomalous Hall voltage of the devices is considered as logic output. The coexistence of nonvolatile four-state memory and complete spin logic functions holds promising application for future computing systems beyond von Neumann architecture.

Automated summary

The study demonstrates the realization of all 16 Boolean logic functions within a single four-state nonvolatile magnetic heterojunction, utilizing controllable field-free spin-orbit torque switching. By assigning different values to four variables of the four-state memory, the complete Boolean logic functions are achieved in three steps.