Related references
Note: Only part of the references are listed.Selectively Grown III-V Lasers for Integrated Si-Photonics
Yu Han et al.
JOURNAL OF LIGHTWAVE TECHNOLOGY (2021)
Low Dark Current 1.55 Micrometer InAs Quantum Dash Waveguide Photodiodes
Yating Wan et al.
ACS NANO (2020)
MOCVD growth of InP-based 1.3 μm quantum dash lasers on (001) Si
Wei Luo et al.
APPLIED PHYSICS LETTERS (2020)
High-speed infrared two-dimensional platinum diselenide photodetectors
Yi Wang et al.
APPLIED PHYSICS LETTERS (2020)
Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si
Baile Chen et al.
ACS PHOTONICS (2020)
Bufferless 1.5 μm III-V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms
Yu Han et al.
OPTICA (2020)
High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 μm
Hao Zhou et al.
OPTICS EXPRESS (2020)
1.55 μm electrically pumped continuous wave lasing of quantum dash lasers grown on silicon
Ying Xue et al.
OPTICS EXPRESS (2020)
Bound-States-in-Continuum Hybrid Integration of 2D Platinum Diselenide on Silicon Nitride for High-Speed Photodetectors
Yi Wang et al.
ACS PHOTONICS (2020)
Comparison of growth structures for continuous-wave electrically pumped 1.55 μm quantum dash lasers grown on (001) Si
Wei Luo et al.
PHOTONICS RESEARCH (2020)
High-speed lateral PIN germanium photodetector with 4-directional light input
Xiao Hu et al.
OPTICS EXPRESS (2020)
The role of traps in the photocurrent generation mechanism in thin InSe photodetectors
Qinghua Zhao et al.
MATERIALS HORIZONS (2020)
High-performance hybrid silicon and lithium niobate Mach-Zehnder modulators for 100 Gbit s-1 and beyond
Mingbo He et al.
NATURE PHOTONICS (2019)
High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate
Shengqiang Xu et al.
OPTICS EXPRESS (2019)
Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate
Jian Huang et al.
ACS PHOTONICS (2019)
Electrically pumped 1.5 μm InP-based quantum dot microring lasers directly grown on (001) Si
Si Zhu et al.
OPTICS LETTERS (2019)
Indium arsenide quantum dot waveguide photodiodes heterogeneously integrated on silicon
Bassem Tossoun et al.
OPTICA (2019)
1.55-μm Lasers Epitaxially Grown on Silicon
Bei Shi et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2019)
High-performance visible light photodetectors based on inorganic CZT and InCZT single crystals
Mohd Shkir et al.
SCIENTIFIC REPORTS (2019)
Inverse-designed low-loss and wideband polarization-insensitive silicon waveguide crossing
Zejie Yu et al.
OPTICS LETTERS (2019)
High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxy
Xiaoli Lin et al.
OPTICS EXPRESS (2019)
Recent progress of III-V quantum dot infrared photodetectors on silicon
Aobo Ren et al.
JOURNAL OF MATERIALS CHEMISTRY C (2019)
High-detectivity perovskite-based photodetector using a Zr-doped TiOx cathode interlayer
C. H. Ji et al.
RSC ADVANCES (2018)
Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si
D. Inoue et al.
APPLIED PHYSICS LETTERS (2018)
InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off
Hosung Kim et al.
OPTICS EXPRESS (2017)
Responsivity optimization of a high-speed germanium-on-silicon photodetector
Monireh Moayedi Pour Fard et al.
OPTICS EXPRESS (2016)
-1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond
H. Chen et al.
OPTICS EXPRESS (2016)
Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates
Jiang Wu et al.
ACS PHOTONICS (2016)
High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode
Stefan Lischke et al.
OPTICS EXPRESS (2015)
High-Speed InGaAs Photodetectors by Selective-Area MOCVD Toward Optoelectronic Integrated Circuits
Yu Geng et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2014)
CMOS-compatible graphene photodetector covering all optical communication bands
Andreas Pospischil et al.
NATURE PHOTONICS (2013)
High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide
Dazeng Feng et al.
APPLIED PHYSICS LETTERS (2009)
InP-Based High-Speed Photodetectors
Andreas Beling et al.
JOURNAL OF LIGHTWAVE TECHNOLOGY (2009)
Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers
Lorenzo Colace et al.
JOURNAL OF LIGHTWAVE TECHNOLOGY (2008)
31GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate
Tao Yin et al.
OPTICS EXPRESS (2007)
High performance, waveguide integrated Ge photodetectors
Donghwan Ahn et al.
OPTICS EXPRESS (2007)
High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition
J Szafraniec et al.
APPLIED PHYSICS LETTERS (2006)
High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform -: art. no. 103501
JF Liu et al.
APPLIED PHYSICS LETTERS (2005)
Share Paper
