Highly efficient and stable electroluminescence from Er-doped Ga2O3 nanofilms fabricated by atomic layer deposition on silicon

Intense 1.53 mu m electroluminescence (EL) is achieved from metal-oxide-semiconductor light-emitting devices based on Er-doped Ga2O3 (Ga2O3:Er) nanofilms fabricated by atomic layer deposition. Due to the wide bandgap and outstanding tolerance to electric field and electron injection of the amorphous Ga2O3 matrix, these silicon-based devices present a low turn-on voltage of similar to 15V, while the maximum injection current can reach 5A/cm(2). The optical power density of the EL emissions is improved to 23.73 mW/cm(2), with the external quantum efficiency of 36.5% and power efficiency of 0.81%. The prototype devices show good stability and retain similar to 90% initial EL intensity after operating consistently for 100h. The EL originates from the impact excitation of doped Er3+ ions by hot electrons generated within dielectric layers. This work manifests the potential of fabricating practical Si-based light source from Ga2O3:Er nanofilms, enabling various optoelectronic applications.

Automated summary

Metal-oxide-semiconductor light-emitting devices based on Er-doped Ga2O3 nanofilms fabricated by atomic layer deposition exhibit intense 1.53 μm electroluminescence with low turn-on voltage, high injection current, improved optical power density, and good stability, demonstrating potential for various optoelectronic applications.