Journal
APPLIED PHYSICS LETTERS
Volume 118, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/5.0046224
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Funding
- MEXT Private University Research Branding Project (2016-2020)
- JSPS KAKENHI [16H06415, 16H06416, 15H02019, 17H01055]
- JST CREST [JPMJCR16N2]
- Grants-in-Aid for Scientific Research [16H06415] Funding Source: KAKEN
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By optimizing the thickness of the waveguide layer, the average Al content of the p-type AlGaN cladding layer, and the film thickness of the cladding layer, the threshold current density (J(th)) of UV-B AlGaN-based laser diodes can be reduced, leading to improved device characteristics.
To reduce the threshold current density (J(th)) of ultraviolet (UV)-B AlGaN-based laser diodes, we investigated the critical parameters aiming to increase the injection efficiency eta (i) and the optical confinement factor Gamma. Optimization of the thickness of the waveguide layer, the average Al content of the p-type AlGaN cladding layer, and the film thickness of the cladding layer demonstrated that the device characteristics can be improved. This optimization achieved a reduction in J(th) to 13.3kA cm(-2) at a lasing wavelength of 300nm, thus offering the lowest J(th) value yet achieved for a UV-B laser diode.
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