Journal
APPLIED PHYSICS LETTERS
Volume 118, Issue 20, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0052601
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Funding
- NATO [G5453, G5748]
- NSF (UCF Award) [ECCS1802208]
- US-Israel BSF [2018010]
- Department of the Defense, Defense Threat Reduction Agency [HDTRA1-20-2-0002]
- NSF [DMR 1856662]
- Direct For Social, Behav & Economic Scie
- Division Of Behavioral and Cognitive Sci [2018010] Funding Source: National Science Foundation
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In experiments, minority hole diffusion length and lifetime were measured independently in Si-doped beta-Ga2O3 Schottky rectifiers irradiated with 18MeV alpha particles and 10MeV protons. Both parameters showed a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the measured diffusion length and lifetime, indicating that hole self-trapping is likely not significant in the 77-295K temperature range.
Minority hole diffusion length and lifetime were measured in independent experiments by electron beam-induced current and time-resolved cathodoluminescence in Si-doped beta-Ga2O3 Schottky rectifiers irradiated with 18MeV alpha particles and 10MeV protons. Both diffusion length and lifetime exhibited a decrease with increasing temperature. The non-equilibrium minority hole mobility was calculated from the independently measured diffusion length and lifetime, indicating that the so-called hole self-trapping is most likely irrelevant in the 77-295K temperature range.
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