Journal
APPLIED PHYSICS LETTERS
Volume 118, Issue 13, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0047937
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Funding
- National Aeronautics and Space Administration [80 NM0018D0004]
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In this study, it was found that the barrier infrared detector structure combining p-type and n-type absorber layers can improve quantum efficiency while reducing fabrication demands. Additionally, the structure performs better under lower biasing conditions.
We studied long and very long wavelength InAs/InAsSb superlattice barrier infrared detectors that contain p-type absorber layers in order to take advantage of the longer electron diffusion length for quantum efficiency (QE) enhancement. While they can achieve higher QE than devices that use only n-type absorbers, their dark current characteristics are affected by the presence of metallurgical and surface p-n junctions, and are best operated under lower biasing conditions where the tunneling dark currents are less pronounced. Rather than using a p-type absorber only, a barrier infrared detector structure with a combination of p- and n-type absorber sections can benefit from a shallower mesa etch that reduces fabrication demands and also decreases the p-type absorber exposed surface area. We compare four complementary barrier infrared detector structures that use an n-type absorber, a combination of p- and n-type absorbers, or a p-type absorber and briefly report results from a 13.3 mu m cutoff focal plane array.
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