Terahertz emission in an InGaAs-based dual-grating-gate high-electron-mobility transistor plasmonic photomixer

We report on terahertz (THz) emission from an InGaAs-based DC-current-driven dual-grating-gate high-electron-mobility transistor excited by photomixed dual continuous-wave-infrared (dual-CW-IR) laser irradiation. The difference frequency (delta f) of the dual-CW-IR laser beams was set around the THz plasmon mode frequencies at different bias conditions. The radiation spectra from the device observed at 120 K showed distinctive emissions beyond the black-body radiation, which were promoted by delta f-dependent coherent plasmons. The results suggest the occurrence of plasmonic boom instability stimulated by the DC current flow in the 2D channel under pertinent DC bias voltages.

Automated summary

This study reports on terahertz emission from a DC-current-driven dual-grating-gate high-electron-mobility transistor in a 2D channel, showing distinctive radiation spectra beyond black-body emission. The results suggest the occurrence of plasmonic boom instability stimulated by the DC current flow.