CuO nanowire-based metal semiconductor metal infrared photodetector

Metal-semiconductor-metal (MSM) infrared photodetector-based Ag/CuO NW/Ag was fabricated using glancing angle deposition technique integrated RF sputtering machine. The transmission electron microscope confirmed the average length and diameter of the fabricated CuO NW were similar to 450 nm +/- 7 nm and 135 nm +/- 5 nm, respectively. Moreover, selective area electron diffraction pattern showed that the growth NW was polycrystalline in nature with d-spacing of 0.21 nm and 0.33 nm. The indirect band gap of CuO NW sample was found to be 1.4 eV. Moreover, Ag/CuO/Ag MSM device exhibited photoresponsivity of 2.9 A/W at -4 V applied bias upon exposure of 855 nm monochromatic light source (low density of power 27.29 nW). In addition, the switching responses were also measured, and the rise and fall time were found to be 0.326 s and 0.245 s, respectively.

Automated summary

A Metal-Semiconductor-Metal (MSM) infrared photodetector based on Ag/CuO NW/Ag was fabricated using glancing angle deposition technique and RF sputtering machine. The CuO NW had an average length and diameter of 450 nm and 135 nm, respectively. The device showed a photoresponsivity of 2.9 A/W and fast switching responses.