Investigation of band offset at PEDOT: PSS/GaN interface

In the present report, the interfacial band offset was investigated in poly (styrenesulfonate) doped poly (3,4-ethylenedioxythiophene) (PEDOT: PSS) and Gallium Nitride (i.e., PEDOT:PSS/GaN) heterojunction using X-ray photoemission studies. A hetero-interface of PEDOT: PSS with molecular beam epitaxy grown GaN surface has been developed, and the changes in morphology and interfacial electronic structure were analyzed. It was observed that the deposition of PEDOT: PSS on GaN pursued uniform coverage and led to a significant reduction in surface roughness from 4.47 to 1.86 nm. Further, the photoemission analysis performed to analysis the band offset in the developed organic/ inorganic hetero-interface revealed a Type-I band alignment with a valence band offset of 1.6 eV.

Automated summary

The report investigated the interfacial band offset in a heterojunction of PEDOT:PSS and Gallium Nitride using X-ray photoemission studies. A Type-I band alignment with a valence band offset of 1.6 eV was observed in the developed PEDOT:PSS/GaN hetero-interface, with PEDOT:PSS deposition on GaN leading to reduced surface roughness and uniform coverage.