Study of thermal parameters of nanocrystalline silicon carbide (3C-SiC) using DSC spectroscopy

Thermal properties of nanocrystalline silicon carbide (3C-SiC) particles were performed depending on the thermal processing rate. The kinetical parameters (heat flux, oxidation reaction rate and activation energy) of thermal effects occurring in the silicon carbide nanoparticles with 99.5+% purity have been determined by 5, 10, 15 and 20 K/min heating rate in the temperature range of 300-1270 K. Activation energies of nanocrystalline 3C-SiC particles were calculated by Arrhenius approximation at different thermal processing rates.

Automated summary

Thermal properties of nanocrystalline silicon carbide particles were studied at different thermal processing rates, determining the kinetical parameters such as heat flux, oxidation reaction rate, and activation energy. The results showed variations in activation energies of nanocrystalline 3C-SiC particles at different thermal processing rates.