4.8 Article

Oxygen defect-induced NO- intermediates promoting NO deep oxidation over Ce doped SnO2 under visible light

Journal

APPLIED CATALYSIS B-ENVIRONMENTAL
Volume 284, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.apcatb.2020.119761

Keywords

NO deep oxidation; Oxygen vacancy control; Visible light; NO chemisorption; Ce doped SnO2

Funding

  1. National Natural Science Foundation of China [21872030]

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Ce-doped SnO2 photocatalyst with abundant OVs was constructed under argon atmosphere to promote NO deep oxidation under visible light. The incorporation of cerium ions generated OVs, where NO was actively adsorbed and transformed into harmless products by ROS. This study offers a new approach for designing high-efficient photocatalysts for NO removal.
A Ce doped SnO2 (Ce-SnO2) photocatalyst was constructed under the argon atmosphere with abundant oxygen vacancies (OVs) for adsorption and activation of NO and O-2, aiming to promote NO deep oxidation removal efficiency under different relative humidity. It was found that the incorporation of cerium ions into SnO2 could results in the generation of OVs under argon atmospheres, which further promoted NO deep oxidation under visible light irradiation. The theoretical calculations results and in-situ DRIFTS demonstrated that NO was actively adsorbed at OVs sites to form the NO- intermediate and finally transformed to the harmless nitrate and nitrite products by the activated reactive oxygen species (ROS) at OVs sites. This process could occur continuously since more OVs were formed under visible light irradiation. This study maybe provides a new approach to design and synthesize high-efficient photocatalysts for NO removal.

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