4.8 Article

Mechanism and Timescales of Reversible p-Doping of Methylammonium Lead Triiodide by Oxygen

Journal

ADVANCED MATERIALS
Volume 33, Issue 23, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202100211

Keywords

doping; energy level alignment; metal halide perovskites; oxygen

Funding

  1. Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) [182087777-SFB951, 423749265-SPP2196]
  2. Minerva Center for Self-Healing Materials
  3. Projekt DEAL
  4. Aryeh and Mintzi Katzman Professorial Chair

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The electronic properties of metal halide perovskites (MHPs) remain under debate, with reported Fermi level positions varying and raising questions about intrinsic and extrinsic defects as dopants. This study demonstrates that MHPs behave as intrinsic semiconductors in the absence of oxygen, but oxygen diffusion leads to pronounced p-doping and positions the Fermi level approximately 0.55 eV above the valence band maximum. The key doping mechanism is suggested to be molecular oxygen substitution of iodine vacancies, supported by density functional theory calculations.
Understanding and controlling the energy level alignment at interfaces with metal halide perovskites (MHPs) is essential for realizing the full potential of these materials for use in optoelectronic devices. To date, however, the basic electronic properties of MHPs are still under debate. Particularly, reported Fermi level positions in the energy gap vary from indicating strong n- to strong p-type character for nominally identical materials, raising serious questions about intrinsic and extrinsic defects as dopants. In this work, photoemission experiments demonstrate that thin films of the prototypical methylammonium lead triiodide (MAPbI(3)) behave like an intrinsic semiconductor in the absence of oxygen. Oxygen is then shown to be able to reversibly diffuse into and out of the MAPbI(3) bulk, requiring rather long saturation timescales of approximate to 1 h (in: ambient air) and over 10 h (out: ultrahigh vacuum), for few 100 nm thick films. Oxygen in the bulk leads to pronounced p-doping, positioning the Fermi level universally approximate to 0.55 eV above the valence band maximum. The key doping mechanism is suggested to be molecular oxygen substitution of iodine vacancies, supported by density functional theory calculations. This insight rationalizes previous and future electronic property studies of MHPs and calls for meticulous oxygen exposure protocols.

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