Monolayer Hexagonal Boron Nitride: An Efficient Electron Blocking Layer in Organic Photovoltaics

In this study, monolayer hexagonal boron nitride (h-BN) grown via chemical vapor deposition (CVD) as an effective electron blocking layer (EBL) for the organic photovoltaics (OPVs) is proposed. Unexpectedly, it is found that h-BN can replace the commonly used hole transport layers (HTLs), i.e., molybdenum trioxide (MoO3) and poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) in an inverted device architecture. Here, a wet-transfer technique is employed and a single layer of h-BN on top of the PV2000:PC60BM blend is successfully placed. Analysis of the bandgap diagram shows that the monolayer h-BN makes smaller barrier for holes but significantly larger barrier for electrons. This makes the h-BN effective in blocking electrons while creating a possible path for the holes through tunneling to the electrode, due to the low energy barrier at the PV2000/h-BN interface. Using h-BN as an EBL, efficient inverted OPVs are achieved with an average solar-to-power conversion efficiency of 6.13%, which is comparable with that of reference devices based on MoO3 (7.3%) and PEDOT:PSS (7.6%) as HTLs. Interestingly, the devices with h-BN shows great light-soak stability. The study reveals that the monolayer h-BN grown by CVD could be an effective alternative EBL for the fabrication of efficient, lightweight, and stable OPVs.

Automated summary

This study suggests monolayer h-BN grown via CVD as an effective replacement for HTLs in the fabrication of efficient inverted OPVs. The use of h-BN creates smaller barriers for holes and larger barriers for electrons, allowing for efficient charge separation and stability in the devices.