4.6 Article

Strain-Modulated Light Emission Properties in a Single InGaN/GaN Multiple-Quantum-Well Microwire-Based Flexible Light-Emitting Diode

Related references

Note: Only part of the references are listed.
Article Materials Science, Multidisciplinary

A fiber-shaped light-emitting pressure sensor for visualized dynamic monitoring

Xufeng Zhou et al.

JOURNAL OF MATERIALS CHEMISTRY C (2020)

Article Nanoscience & Nanotechnology

Monolithic Inorganic ZnO/GaN Semiconductors Heterojunction White Light-Emitting Diodes

Seonghoon Jeong et al.

ACS APPLIED MATERIALS & INTERFACES (2018)

Article Physics, Condensed Matter

MOVPE growth and indium incorporation of polar, semipolar (11(2)over-bar2) and (20(2)over-bar21) InGaN

Duc V. Dinh et al.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2016)

Review Chemistry, Multidisciplinary

Advances of flexible pressure sensors toward artificial intelligence and health care applications

Yaping Zang et al.

MATERIALS HORIZONS (2015)

Article Chemistry, Multidisciplinary

Exfoliation of Threading Dislocation-Free, Single-Crystalline, Ultrathin Gallium Nitride Nanomembranes

Rami T. ElAfandy et al.

ADVANCED FUNCTIONAL MATERIALS (2014)

Article Materials Science, Multidisciplinary

The Effect of Al Interlayers on the Growth of AlN on Si Substrates by Metal Organic Chemical Vapor Deposition

Xun Wang et al.

ELECTRONIC MATERIALS LETTERS (2014)

Article Chemistry, Multidisciplinary

Wide Bandgap III-Nitride Nanomembranes for Optoelectronic Applications

Sung Hyun Park et al.

NANO LETTERS (2014)

Article Physics, Applied

GaN nanowire/thin film vertical structure p-n junction light-emitting diodes

Young Joon Hong et al.

APPLIED PHYSICS LETTERS (2013)

Review Physics, Applied

Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

Giovanni Verzellesi et al.

JOURNAL OF APPLIED PHYSICS (2013)

Article Engineering, Electrical & Electronic

Semipolar (20(2)over-bar(1)over-bar) InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

Daniel F. Feezell et al.

JOURNAL OF DISPLAY TECHNOLOGY (2013)

Article Physics, Applied

Violet electroluminescence from p-GaN thin film/n-GaN nanowire homojunction

Jaehui Ahn et al.

APPLIED PHYSICS LETTERS (2010)

Review Engineering, Electrical & Electronic

Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges

Hisashi Masui et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2010)

Article Physics, Applied

Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers

Yen-Kuang Kuo et al.

APPLIED PHYSICS LETTERS (2009)

Article Physics, Applied

Origin of efficiency droop in GaN-based light-emitting diodes

Min-Ho Kim et al.

APPLIED PHYSICS LETTERS (2007)

Article Physics, Applied

365 nm operation of n-nanowire/p-gallium nitride homojunction light emitting diodes

Abhishek Motayed et al.

APPLIED PHYSICS LETTERS (2007)

Article Physics, Applied

III-nitride blue and ultraviolet photonic crystal light emitting diodes

TN Oder et al.

APPLIED PHYSICS LETTERS (2004)

Article Chemistry, Multidisciplinary

Catalytic growth and characterization of gallium nitride nanowires

CC Chen et al.

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2001)