Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 13, Issue 15, Pages 17141-17157Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c03433
Keywords
halide perovskite memristors; lead-free; stability; resistive switching; ion migration
Funding
- National Natural Science Foundation of China [11804166, 52072101]
- China Postdoctoral Science Foundation [2018M630587]
- Natural Science Foundation of Zhejiang Province [LY18E020006]
- Guangdong Science and Technology Program [2017B030314002]
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Memristors are gaining attention as a basic circuit element, especially in the field of nonvolatile memory devices. Halide perovskite memristors are seen as a potential solution for low-cost information storage and computing. Developing lead-free HP memristors is crucial to address the issues of high toxicity and low stability associated with lead-based HP memristors.
Memristors have attracted considerable attention as one of the four basic circuit elements besides resistors, capacitors, and inductors. Especially, the nonvolatile memory devices have become a promising candidate for the new-generation information storage, due to their excellent write, read, and erase rates, in addition to the low-energy consumption, multistate storage, and high scalability. Among them, halide perovskite (HP) memristors have great potential to achieve low-cost practical information storage and computing. However, the usual lead-based HP memristors face serious problems of high toxicity and low stability. To alleviate the above issues, great effort has been devoted to develop lead-free HP memristors. Here, we have summarized and discussed the advances in HP memristors from lead-based to lead-free materials including memristive properties, stability, neural network applications, and memristive mechanism. Finally, the challenges and prospects of lead-free HP memristors have been discussed.
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