Related references
Note: Only part of the references are listed.Molecular Design of Solid-State Nanopores: Fundamental Concepts and Applications
Gonzalo Perez-Mitta et al.
ADVANCED MATERIALS (2019)
Monte Carlo simulations of ion channeling in crystals containing dislocations and randomly displaced atoms
Przemyslaw Jozwik et al.
JOURNAL OF APPLIED PHYSICS (2019)
Nanoscale density variations induced by high energy heavy ions in amorphous silicon nitride and silicon dioxide
P. Mota-Santiago et al.
NANOTECHNOLOGY (2018)
Degradation in AlGaN/GaN HEMTs irradiated with swift heavy ions: Role of latent tracks
P. P. Hu et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2018)
Failure Estimates for SiC Power MOSFETs in Space Electronics
Kenneth F. Galloway et al.
AEROSPACE (2018)
Creating nanoporous graphene with swift heavy ions
H. Vazquez et al.
CARBON (2017)
Implantation damage formation in a-, c- and m-plane GaN
K. Lorenz et al.
ACTA MATERIALIA (2017)
Review-Ionizing Radiation Damage Effects on GaN Devices
S. J. Pearton et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2016)
The influence of the electronic specific heat on swift heavy ion irradiation simulations of silicon
Galvin S. Khara et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2016)
Simulation of Rutherford backscattering spectrometry from arbitrary atom structures
S. Zhang et al.
PHYSICAL REVIEW E (2016)
Advances in understanding of swift heavy-ion tracks in complex ceramics
Maik Lang et al.
CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE (2015)
The role of electronic energy loss in ion beam modification of materials
William J. Weber et al.
CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE (2015)
Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model
M. Sall et al.
JOURNAL OF MATERIALS SCIENCE (2015)
Ionization-induced annealing of pre-existing defects in silicon carbide
Yanwen Zhang et al.
NATURE COMMUNICATIONS (2015)
Mars' Surface Radiation Environment Measured with the Mars Science Laboratory's Curiosity Rover
Donald M. Hassler et al.
SCIENCE (2014)
Graphitic nanostripes in silicon carbide surfaces created by swift heavy ion irradiation
Oliver Ochedowski et al.
NATURE COMMUNICATIONS (2014)
Molecular dynamics simulations of swift heavy ion induced defect recovery in SiC
M. Backman et al.
COMPUTATIONAL MATERIALS SCIENCE (2013)
Tracks and Voids in Amorphous Ge Induced by Swift Heavy-Ion Irradiation
M. C. Ridgway et al.
PHYSICAL REVIEW LETTERS (2013)
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
Raymond S. Pengelly et al.
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES (2012)
Automated identification and indexing of dislocations in crystal interfaces
Alexander Stukowski et al.
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING (2012)
Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals
A. Debelle et al.
PHYSICAL REVIEW B (2012)
A mechanism for damage formation in GaN during rare earth ion implantation at medium range energy and room temperature
P. Ruterana et al.
JOURNAL OF APPLIED PHYSICS (2011)
Properties of amorphous GaN from first-principles simulations
B. Cai et al.
PHYSICAL REVIEW B (2011)
Visualization and analysis of atomistic simulation data with OVITO-the Open Visualization Tool
Alexander Stukowski
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING (2010)
Electron-phonon coupling and electron heat capacity of metals under conditions of strong electron-phonon nonequilibrium
Zhibin Lin et al.
PHYSICAL REVIEW B (2008)
Fine Structure in Swift Heavy Ion Tracks in Amorphous SiO2
P. Kluth et al.
PHYSICAL REVIEW LETTERS (2008)
Refinement of thermodynamic data on GaN
K. T. Jacob et al.
JOURNAL OF MATERIALS RESEARCH (2007)
High thermal conductivity of gallium nitride (GaN) crystals grown by HVPE process
Hiroyuki Shibata et al.
MATERIALS TRANSACTIONS (2007)
Lattice damage produced in GaN by swift heavy ions
SO Kucheyev et al.
JOURNAL OF APPLIED PHYSICS (2004)
Modelling of compound semiconductors: analytical bond-order potential for gallium, nitrogen and gallium nitride
J Nord et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2003)
Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth
W Utsumi et al.
NATURE MATERIALS (2003)
Ion implantation into GaN
SO Kucheyev et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2001)
Transient thermal processes in heavy ion irradiation of crystalline inorganic insulators
M Toulemonde et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2000)