4.7 Article

Tuning the strength of built-in electric field in 2D/2D g-C3N4/SnS2 and g-C3N4/ZrS2 S-scheme heterojunctions by nonmetal doping

Journal

JOURNAL OF MATERIOMICS
Volume 7, Issue 5, Pages 988-997

Publisher

ELSEVIER
DOI: 10.1016/j.jmat.2021.02.015

Keywords

Graphitic carbon nitride; Density functional theory; Field strength; Photocatalysis; Van der Waals heterostructure

Funding

  1. National Key Research and Development Program of China [2018YFB1502001]
  2. National Natural Science Foundation of China [21905219, 51932007, U1905215, 21871217, U1705251]
  3. National Postdoctoral Program for Innovative Talents [BX20180231]
  4. China Postdoctoral Science Foundation [2020M672432]
  5. Hubei Postdoctoral Program for Innovative Research Post
  6. General Research Fund-Research Grant Council of Hong Kong Government [18301117]
  7. Dean Research Fund, EdUHK [19-20]

Ask authors/readers for more resources

Tuning the strength of interfacial built-in electric field (IEF) in 2D/2D graphitic carbon nitride (g-C3N4)/MS2 (M = Sn, Zr) S-scheme heterojunctions through nonmetal doping significantly enhances photocatalytic activity. Oxygen and sulfur doping leads to increased interfacial electron transfer, resulting in better hydrogen production activity in photocatalysts.
Single photocatalysts usually exhibit unsatisfactory performance due to the serious recombination of photogenerated electron-hole pairs. Combining two photocatalysts to construct S-scheme heterojunction could solve this problem. In S-scheme mechanism, the interfacial built-in electric field (IEF) provides a vital driving force for efficient charge separation. Modifying the IEF is a feasible strategy to further improve the photocatalytic activity. Herein, a novel idea of tuning the strength of IEF in 2D/2D graphitic carbon nitride (g-C3N4)/MS2 (M = Sn, Zr) S-scheme heterojunctions by nonmetal doping was developed by employing density functional theory calculation. Three nonmetal elements (O, P, and S) were severally introduced into g-C3N4/MS2 composites. Charge density difference suggested that O and S doping led to increased interfacial electron transfer, while P doping had minimal influence. As expected, the calculated field strength of O- and S-doped g-C3N4/MS2 composites was significantly larger than that of pristine and P-doped g-C3N4/MS2 composites. Therefore, O and S doping endowed g-C3N4/MS2 S-scheme heterojunctions with enhanced IEF and more thorough charge transfer. Correspondingly, the experimentally synthesized O-C3N4/SnS2 composite exhibited better photocatalytic H-2-production activity than g-C3N4/SnS2 composite. This work proposed an original idea of employing proper nonmetal doping to magnify the advantage of S-scheme heterojunction in accelerating charge separation. (C) 2021 The Chinese Ceramic Society. Production and hosting by Elsevier B.V.

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