Journal
SOLAR RRL
Volume 5, Issue 5, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/solr.202100068
Keywords
p-type dopants; interfacial layer; lead free; perovskite solar cells; tin based solar cells
Funding
- National Key Research and Development Program of China [2017YFB0404501]
- National Natural Science Foundation of China [62074083, 62005131, 61705111, 61704091]
- National Major Fundamental Research Program of China [91833306]
- Natural Science Foundation of Jiangsu Province [BM2012010, BK20170899]
- National Postdoctoral Program for Innovative Talents [BX201700122]
- Priority Academic Program Development of Jiangsu Higher Education Institutions [YX030003]
- Jiangsu Planned Projects for Postdoctoral Research Funds [1801216C]
- Startup Foundation of Nanjing University of Posts and Telecommunications [NY217010, NY217011]
- Open Foundation from Jilin University [IOSKL2017KF04, IOSKL2018KF01]
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The research successfully modified the heterointerface between the perovskite active layer and the hole transport layer (HTL) by depositing a p-type dopant, tetrafluoro-tetracyanoquinodimethane (F4TCNQ), on the commonly used poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) HTL. The interfacial layer introduced a passivated contact and suppressed trap density at the HTL/perovskite interface through halogen bonding, leading to an improved efficiency and stability of the inverted tin perovskite solar cells (TPSC).
Interfacial engineering plays a key role for the stability and efficiency of perovskite photovoltaics, especially for the tin perovskite solar cells (TPSCs). Herein, a simple and effective interfacial layer approach to modify the heterointerface between hole transport layer (HTL) and perovskite active layer is reported. By the deposition of a p-type dopant, tetrafluoro-tetracyanoquinodimethane (F4TCNQ) onto the commonly used poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) HTL, a favorable energy level alignment with the mixedcation tin perovskite is obtained. Moreover, the F4TCNQ interfacial layer introduces a passivated contact and suppressed trap density at the HTL/ perovskite interface through halogen bonding. As a result, the optimized TPSC yields an improved efficiency of 8.11% as compared with 6.41% of the reference device. Meanwhile, the stability of the TPSC is also improved due to the hydrophobicity of the F4TCNQ interfacial layer. This work demonstrates that the incorporation of an interfacial layer at the HTL/perovskite interface is a feasible approach to boost the efficiency and stability of inverted TPSC.
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