4.8 Article

A spin-orbit torque device for sensing three-dimensional magnetic fields

Journal

NATURE ELECTRONICS
Volume 4, Issue 3, Pages 179-184

Publisher

NATURE RESEARCH
DOI: 10.1038/s41928-021-00542-8

Keywords

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Funding

  1. National Natural Science Foundation of China (NSFC) [62074063, 61821003, 61904051, 61904060, 51671098, 61674062]
  2. National Key Research and Development Program of China [2020AAA0109000]
  3. Research Project of Wuhan Science and Technology Bureau [2019010701011394]
  4. Fundamental Research Funds for the Central Universities [HUST: 2018KFYXKJC019]

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The article introduces a single device composed of a Ta/CoFeB/MgO heterostructure that can detect three-dimensional magnetic fields using changes in its anomalous Hall resistance with high sensitivity and good linearity. This compact sensor exhibits good linearity and high sensitivity in the x, y, and z directions, with low noise levels.
Changes in the anomalous Hall resistance of a single device comprising a Ta/CoFeB/MgO heterostructure can be used to probe three-dimensional magnetic fields with high sensitivity and good linearity. Magnetic field sensors are important in a variety of applications, including transport and medical devices. However, existing solid-state approaches for the detection of three-dimensional magnetic fields require multiple sensors, making the set-ups bulky. Here, we show that a single spin-orbit torque device composed of a Ta/CoFeB/MgO heterostructure can detect a vector magnetic field. In-plane and out-of-plane field components lead to the displacement of domain walls in the CoFeB layer, modulating the associated anomalous Hall effect resistance. Modulation of the anomalous Hall effect resistance varies linearly with the x, y and z components of a vector magnetic field. Our compact three-dimensional magnetic field sensor exhibits good linearity within a certain range (3.2%, 2.7% and 4.3% for the x, y and z directions, respectively) and high sensitivity (205, 282 and 1,845 V A(-1) T-1 for the x, y and z directions, respectively). The sensor also exhibits low 1/f noise.

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