Journal
ELECTRONICS
Volume 10, Issue 5, Pages -Publisher
MDPI
DOI: 10.3390/electronics10050631
Keywords
co-sputter; aluminum-gallium-zinc oxide; thin film transistor; photodetector; phototransistor
Categories
Funding
- Ministry of Science and Technology [MOST 107-2221-E-006-146]
- Advanced Optoelectronic Technology Center, National Cheng Kung University from the Ministry of Education
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The research has shown that AGZO photo thin film transistors have high transparency and adjustable bandgap, excellent performance, and are suitable for solar-blind applications.
In this thesis, Aluminum-Gallium-Zinc oxide (AGZO) photo thin film transistors (PTFTs) fabricated by the co-sputtered method are investigated. The transmittance and absorption show that AGZO is highly transparent across the visible light region, and the bandgap of AGZO can be tuned by varying the co-sputtering power. The AGZO TFT demonstrates high performance with a threshold voltage (V-T) of 0.96 V, on/off current ratio of 1.01 x 10(7), and subthreshold swing (SS) of 0.33 V/dec. Besides, AGZO has potential for solar-blind applications because of its wide bandgap. The AGZO PTFT of this research can achieve a rejection ratio of 4.31 x 10(4) with proper sputtering power and a rising and falling time of 35.5 s and 51.5 s.
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