Enhanced UV photodetection characteristics of annealed Gd2O3 nanorods

In this study, gadolinium oxide nanorods (Gd2O3 NRs) were deposited using the glancing angle deposition (GLAD) technique on n-type Si (100) substrate. The annealing effect on the electrical and structural properties of the as-deposited samples was evaluated at 500 degrees C. The improved crystal structure was seen in the annealed sample. The average crystallite size of the annealed samples (21.85 nm) was found to be higher than that of the as-deposited samples (18.08 nm). Enhancement in the responsivity with a turn-on voltage of + 0.47 V was estimated for the annealed devices. Moreover, the improved internal gain of 53.13, detectivity of 9.47 x 10(13) Jones, and noise equivalent power of 5.92 x 10(-14) W were obtained after annealing. A rise time of 34 ms and a fall time of 53 ms were also obtained for the annealed device. The overall improvement in the device performance of Gd2O3 NRs after annealing could be a viable candidate for photodetector applications.

Automated summary

The study deposited gadolinium oxide nanorods on n-type Si substrate using the glancing angle deposition (GLAD) technique. Annealing at 500 degrees C improved the crystal structure and increased the average crystallite size of the samples. Enhanced responsivity, internal gain, detectivity, and noise equivalent power were observed in the annealed devices, making them a promising candidate for photodetector applications.