Angular dependent magnetoresistance in organic spin valves

Vertical organic spin valve (OSV)-based organic spintronic devices with additional degree of freedom to utilize and control the magnetoresistance (MR) by spin of electrons, have attracted a lot of interests for both foundation science and future functional device applications. Herein the effects of temperature, bias voltage and direction of magnetic field on the MR of the OSV are investigated to disclose the mechanisms. Specifically, the MR shows angular dependence with the value tuned from negative to positive by rotating the field direction from in-plane to out-of-plane, corresponding to the angular dependent spin moment. A domain-switch model is proposed to simulate the resistance changes in OSV device. The research provides a new route to tune the MR in organic spintronic devices, which is significant for future functional device applications.

Automated summary

This study investigates the effects of temperature, bias voltage, and direction of magnetic field on the magnetoresistance (MR) of vertical organic spin valve (OSV) devices, revealing the mechanisms and proposing a domain-switch model to simulate resistance changes. The research provides a new route to tune the MR in organic spintronic devices, which is significant for future functional device applications.