Journal
MATERIALS RESEARCH EXPRESS
Volume 8, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1591/abe250
Keywords
AlInN; GaInN; lattice strain
Categories
Funding
- MEXT 'Research and development of next-generation semiconductor to realize energy-saving society' Program [JPJ005357]
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The metalorganic chemical vapor deposition of approximately 300-nm thick epitaxial AlInN films with different alloy compositions was carried out on a semi-relaxed c-plane GaInN template. It was observed that the morphology and microstructure of the films varied depending on the alloy composition, with a smooth surface for films grown with in-plane tensile strain and a granular morphology for films grown with in-plane compressive strain. This variation was attributed to the in-plane strain generated during growth on the GaInN template.
Metalorganic chemical vapor deposition of approximately 300-nm thick epitaxial AlInN films with different alloy compositions was performed using a semi-relaxed c-plane GaInN template as an underlying substrate. The GaInN template consisted of a Ga0.98In0.02N film on a facet-structured GaN film formed on a c-plane sapphire substrate by the epitaxial lateral overgrowth technique, and its surface was treated with the chemical-mechanical polishing. It was observed that an Al0.835In0.165N film grown with an in-plane tensile strain exhibited a relatively smooth surface whereas an Al0.781In0.219N film grown with an in-plane compressive strain exhibited a granular morphology owing to a columnar polycrystalline structure. This phenomenon was quite similar to that observed for AlInN films grown non GaN/sapphire templates (GaN templates); therefore, it was speculated that the microstructure variation might have been caused by the in-plane compressive strain generated in AlInN films on the GaInN template in the same way as on GaN templates or FS-GaN substrates.
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