Journal
CRYSTALS
Volume 11, Issue 3, Pages -Publisher
MDPI
DOI: 10.3390/cryst11030234
Keywords
GaN; Si substrate; two-step growth method; III-V ratio; pressure; threading dislocation; growth stop; crack-free; compressive stress
Funding
- National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology (MEST) [NRF-2018R1A6A1A03025761, NRF-2019R1I1A1A01064011]
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The crack-free GaN film grown on a 4-inch Si (111) substrate is achieved using a two-step growth method controlled by III/V ratio and pressure. This method effectively reduces the tensile stress in the GaN layer grown on the Si substrate, resulting in a decrease in threading dislocations.
A crack-free GaN film grown on 4-inch Si (111) substrate is proposed using two-step growth methods simply controlled by both III/V ratio and pressure. Two-step growth process is found to be effective in compensating the strong tensile stress in the GaN layer grown on Si substrate. The high-resolution X-ray diffraction (XRD) rocking curves of (002) and (102) planes for the GaN epitaxial layer with two-step growth method are 317 and 432 arcsec, while the corresponding values for the reference sample without two-step growth method are 550 and 1207 arcsec, respectively. The reduced threading dislocation of GaN film with two-step growth method is obtained to be similar to 2 x 10(8)/cm(2), which is attributed to effectively annihilate and bend threading dislocation.
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