Room temperature Mott metal-insulator transition in V2O3 compounds induced via strain-engineering

Vanadium sesquioxide (V2O3) is an archetypal Mott insulator in which the atomic positions and electron correlations change as temperature, pressure, and doping are varied, giving rise to different structural, magnetic, or electronic phase transitions. Remarkably, the isostructural Mott transition in Cr-doped V2O3 between paramagnetic metallic and insulating phase observed in bulk has been elusive in thin film compounds so far. Here, via continuous lattice deformations induced by heteroepitaxy, we demonstrate a room temperature Mott metal-insulator transition in 1.5% Cr-doped and pure V2O3 thin films. By means of a controlled epitaxial strain, not only the structure but also the intrinsic electronic and optical properties of the thin films are stabilized at different intermediate states between the metallic and insulating phases, inaccessible in bulk materials. This leads to films with unique features such as a colossal change in room temperature resistivity (Delta R/R up to 100 000%) and a broad range of optical constant values as consequence of a strain-modulated bandgap. We propose a new phase diagram for pure and Cr-doped V2O3 thin films with the engineered in-plane lattice constant as a tunable parameter. Our results demonstrate that controlling phase transitions in correlated systems by epitaxial strain offers a radical new approach to create the next generation of Mott devices.

Automated summary

The study demonstrates a room temperature Mott metal-insulator transition in 1.5% Cr-doped and pure V2O3 thin films by controlling phase transitions through epitaxial strain. The engineered in-plane lattice constant serves as a tunable parameter for stabilization of structure and properties, leading to unique features unseen in bulk materials. This approach offers a radical new way to create the next generation of Mott devices.