Journal
NANOPHOTONICS
Volume 10, Issue 5, Pages 1573-1579Publisher
WALTER DE GRUYTER GMBH
DOI: 10.1515/nanoph-2021-0002
Keywords
graphene; graphene/germanium heterostructure; interfacial oxide layer; photodetector; Schottky junction
Categories
Funding
- Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) [2013M3A6B1078873]
- Creative Materials Discovery Program [2015M3D1A1068062]
- Nano Materials Technology Development Program of the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning (MOSIP), Korea [2016M3A7B4909942]
- National Research Foundation of Korea [4199990114297] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The performance of a graphene/Ge Schottky junction near-infrared photodetector is significantly enhanced by inserting a thin Al2O3 interfacial layer between graphene and Ge. Dark current is reduced by two orders of magnitudes, and the specific detectivity is improved to 1.9 x 10(10) cm . Hz(1/2)W(-1). The responsivity is improved to 1.2 AW(-1) with an interfacial layer from 0.5 AW(-1) of the reference devices. The normalized photo-todark current ratio is improved to 4.3 x 10(7) W-1 at a wavelength of 1550 nm, which is 10-100 times higher than those of other Ge photodetectors.
The performance of a graphene/Ge Schottky junction near-infrared photodetector is significantly enhanced by inserting a thin Al2O3 interfacial layer between graphene and Ge. Dark current is reduced by two orders of magnitudes, and the specific detectivity is improved to 1.9 x 10(10) cm . Hz(1/2)W(-1). The responsivity is improved to 1.2 AW(-1) with an interfacial layer from 0.5 AW(-1) of the reference devices. The normalized photo-todark current ratio is improved to 4.3 x 10(7) W-1 at a wavelength of 1550 nm, which is 10-100 times higher than those of other Ge photodetectors.
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