4.7 Article

Kinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfaces

Journal

NANOMATERIALS
Volume 11, Issue 3, Pages -

Publisher

MDPI
DOI: 10.3390/nano11030624

Keywords

gallium nitride; nanowires; guided growth; surface-diffusion

Funding

  1. European Research Council (ERC) [838702] Funding Source: European Research Council (ERC)
  2. European Research Council [838702] Funding Source: Medline
  3. Israel Science Foundation [2444/19] Funding Source: Medline
  4. Russian Science Foundation [19-72-30004] Funding Source: Medline
  5. Strengthening Nanoscience and Nanotechnology Research at CEITEC (SINNCE) [810626] Funding Source: Medline

Ask authors/readers for more resources

The bottom-up assembly of nanowires allows for control over their dimensions, structure, orientation, and physical properties; Surface-guided growth of planar nanowires eliminates the need for additional post-growth processes; The general growth model provides a rational approach to better control nanowire dimensions and expand the range of materials systems and potential applications in nanotechnology.
The bottom-up assembly of nanowires facilitates the control of their dimensions, structure, orientation and physical properties. Surface-guided growth of planar nanowires has been shown to enable their assembly and alignment on substrates during growth, thus eliminating the need for additional post-growth processes. However, accurate control and understanding of the growth of the planar nanowires were achieved only recently, and only for ZnSe and ZnS nanowires. Here, we study the growth kinetics of surface-guided planar GaN nanowires on flat and faceted sapphire surfaces, based on the previous growth model. The data are fully consistent with the same model, presenting two limiting regimes-either the Gibbs-Thomson effect controlling the growth of the thinner nanowires or surface diffusion controlling the growth of thicker ones. The results are qualitatively compared with other semiconductors surface-guided planar nanowires materials, demonstrating the generality of the growth mechanism. The rational approach enabled by this general model provides better control of the nanowire (NW) dimensions and expands the range of materials systems and possible application of NW-based devices in nanotechnology.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.7
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available