4.7 Article

Fermi-Level Tuning of G-Doped Layers

Journal

NANOMATERIALS
Volume 11, Issue 2, Pages -

Publisher

MDPI
DOI: 10.3390/nano11020505

Keywords

nanostructuring; semiconductor; doping

Funding

  1. Shota Rustaveli National Science Foundation (SRNSF)
  2. Georgia National Innovation Ecosystem [CARYS-19-218]

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Recent study observed geometry-induced quantum effects in periodic nanostructures, particularly in Silicon NG layers. The Fermi-level tuning of G-doped layers by changing NG depth was investigated, showing a significant increase in the Fermi level at 10 nm depth, with decreasing effects in p- and n-type substrates. The results were explained using the G-doping theory and G-doped layer formation mechanism introduced in previous works.
Recently, geometry-induced quantum effects were observed in periodic nanostructures. Nanograting (NG) geometry significantly affects the electronic, magnetic, and optical properties of semiconductor layers. Silicon NG layers exhibit geometry-induced doping. In this study, G-doped junctions were fabricated and characterized and the Fermi-level tuning of the G-doped layers by changing the NG depth was investigated. Samples with various indent depths were fabricated using laser interference lithography and a consecutive series of reactive ion etching. Four adjacent areas with NG depths of 10, 20, 30, and 40 nm were prepared on the same chip. A Kelvin probe was used to map the work function and determine the Fermi level of the samples. The G-doping-induced Fermi-level increase was recorded for eight sample sets cut separately from p-, n-, p(+)-, and n(+)-type silicon substrates. The maximum increase in the Fermi level was observed at a10 nm depth, and this decreased with increasing indent depth in the p- and n-type substrates. Particularly, this reduction was more pronounced in the p-type substrates. However, the Fermi-level increase in the n(+)- and p(+)-type substrates was negligible. The obtained results are explained using the G-doping theory and G-doped layer formation mechanism introduced in previous works.

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