Related references
Note: Only part of the references are listed.Decomposition Resilience of GaN Nanowires, Crested and Surficially Passivated by AlN
Swagata Bhunia et al.
CRYSTAL GROWTH & DESIGN (2020)
Role of defect saturation in improving optical response from InGaN nanowires in higher wavelength regime
Dhiman Nag et al.
NANOTECHNOLOGY (2020)
Engineering V-shaped pits in InGaN layers grown by PA-MBE toward optimizing the active region of green LEDs
Dhiman Nag et al.
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS (2019)
Impact of distributed Bragg reflector on carrier and photon dynamics in GaN-based surface emitting diodes manifested by ultrafast transient absorption spectroscopy
Tarni Aggarwal et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2019)
Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150mm Si wafer: A fully epitaxial system for high power application
Ritam Sarkar et al.
APPLIED PHYSICS LETTERS (2019)
Triaxially uniform high-quality AlxGa(1-x)N (x∼50%) nanowires on template free sapphire substrate
Ritam Sarkar et al.
NANOTECHNOLOGY (2019)
Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes
Malleswararao Tangi et al.
JOURNAL OF APPLIED PHYSICS (2018)
34.5 m underwater optical wireless communication with 2.70 Gbps data rate based on a green laser diode with NRZ-OOK modulation
Xiaoyan Liu et al.
OPTICS EXPRESS (2017)
Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency
C. Haller et al.
APPLIED PHYSICS LETTERS (2017)
Field-assisted Shockley-Read-Hall recombinations in III-nitride quantum wells
Aurelien David et al.
APPLIED PHYSICS LETTERS (2017)
Scalable Nanowire Photonic Crystals: Molding the Light Emission of InGaN
Yong-Ho Ra et al.
ADVANCED FUNCTIONAL MATERIALS (2017)
Efficiency Drop in Green InGaN/GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations
Matthias Auf Der Maur et al.
PHYSICAL REVIEW LETTERS (2016)
GaN-based green laser diodes
Jiang Lingrong et al.
JOURNAL OF SEMICONDUCTORS (2016)
On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements
Joachim Piprek et al.
APPLIED PHYSICS LETTERS (2015)
Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes
Dario Schiavon et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2013)
The effect of interface processing on the distribution of interfacial defect states and the C-V characteristics of III-V metal-oxide-semiconductor field effect transistors
Cheng-Wei Cheng et al.
JOURNAL OF APPLIED PHYSICS (2011)
Three-dimensional GaN for semipolar light emitters
T. Wunderer et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2011)
The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
Di Zhu et al.
APPLIED PHYSICS LETTERS (2009)
Negative capacitance in light-emitting devices
C. Y. Zhu et al.
SOLID-STATE ELECTRONICS (2009)
Effect of threading defects on InGaN/GaN multiple quantum well light emitting diodes
M. S. Ferdous et al.
APPLIED PHYSICS LETTERS (2007)
Experimental analysis and theoretical model for anomalously high ideality factors (n>>2.0) in AlGaN/GaN p-n junction diodes
JM Shah et al.
JOURNAL OF APPLIED PHYSICS (2003)
Share Paper
