4.6 Article

Carrier-Induced Defect Saturation in Green InGaN LEDs: A Potential Phenomenon to Enhance Efficiency at Higher Wavelength Regime

Journal

ACS PHOTONICS
Volume 8, Issue 3, Pages 926-932

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.0c01969

Keywords

RC modeling; CV measurements; green gap; SRH recombination; GV characteristics; negative capacitance

Funding

  1. Ministry of Electronics and Information Technology (Meity), India
  2. Ministry of Human Resource Development (MHRD), India
  3. Ministry of Science and Technology (MOST), Taiwan

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Non-radiative defects play a crucial role in regulating the performance of LEDs, and defect saturation in LEDs has been relatively underexplored in the literature. This study establishes a theoretical background and experimental evidence for carrier-induced defect saturation in InGaN LEDs, demonstrating the significant impact of this phenomenon on device performance. The proposed correction term in the RC circuit model for LEDs, considering defect saturation, provides a better understanding of the frequency-dependent CV characteristics, showing a good match with experimental data.
Non-radiative defects play a deterministic role in regulating the performance of LEDs. Yet, defect saturation in LEDs is relatively unexplored in the literature. Here, we establish the theoretical background of carrier-induced defect saturation from the band structure of quantum well (QW)-based InGaN LEDs after solving Poisson and Schrodinger's equations self-consistently. Time dynamics of defect saturation are demonstrated through solving a set of coupled differential rate equations iteratively, considering carrier transitions between different energy levels in the QW region. They indicate an increasing degree of defect saturation with higher carrier injection at steady state. Capacitance versus voltage (CV) measurements on fabricated InGaN MQW LEDs, conducted at low frequencies clearly demonstrate the considerable effect of defect saturation at higher bias. We propose a correction term in the typical RC circuit model for LEDs, considering defect saturation, and solved it analytically to explain the frequency-dependent CV characteristics. Analytical calculation of CV response, based on the modified RC model, shows a fairly satisfactory matching with the experimental data at different frequencies. Also, the frequency dependence of negative capacitance at a higher bias regime is explained through the conductance versus voltage (GV) characteristics.

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