4.8 Article

Microsupercapacitor with a 500 nm gap between MXene/CNT electrodes

Journal

NANO ENERGY
Volume 81, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.nanoen.2020.105616

Keywords

Microsupercapacitors; MXene; Nanofabrication; Carbon nanotubes; Fib

Funding

  1. Global Research and Development Center Program (NNFC-Drexel-SMU FIRST Nano Co-op Centre) [2015K1A4A3047100]
  2. National Research Foundation (NRF) of Korea - Ministry of Science and ICT, Korea [NRF-2015M3A7B6027973, NRF-2015M3A7B7046618]
  3. National Research Foundation of Korea [2015M3A7B7046618] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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This study presents a method for fabricating on-chip symmetric MSCs with coplanar interdigitated electrodes using focused-ion-beam process and carbon nanotube electrodes. The micro supercapacitors produced have high areal capacitance with narrow gaps between electrode fingers, while electron beam lithography and photolithography are utilized to create ultra-small footprint devices.
Decreasing the size of portable, wearable, and integrated electronics requires subsequent reduction in the accompanying energy storage devices. To further decrease the size of supercapacitors without compromising device performance, adequate materials are required as well as appropriate device design. Traditionally, carbon nanomaterials have been utilized within high-performance electrochemical energy storage applications, however carbides, specifically two-dimensional (2D) transition metal carbides and or nitrides (MXenes) have shown promise. Herein, a focused-ion-beam (FIB) process is used for patterning of titanium carbide (Ti3C2) carbon nanotube (CNT) electrodes into a finely controlled coplanar interdigitated configuration. The symmetric micro supercapacitors produced have a narrow, 500 nm gap between the electrode fingers and exhibit high areal capacitance of similar to 317 mF cm(-2) at a scan rate of 50 mV s(-1) and still retain >30% of their capacitance (similar to 104 mF cm(-2)) at 100 V s(-1). In addition, electron beam lithography and photolithography are utilized to create almost invisible devices with ultra-small footprints (0.04 mm(2) device areas) that can be used for securing electronic components. This study provides a simple and reliable method for fabrication of on-chip symmetric MSCs with coplanar interdigitated electrodes.

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