Journal
MICROMACHINES
Volume 12, Issue 3, Pages -Publisher
MDPI
DOI: 10.3390/mi12030283
Keywords
aluminum nitride; silicon carbide; Schottky barrier diodes; radio frequency sputtering; X-ray diffraction; X-ray photoelectron spectroscopy
Categories
Funding
- Technology Innovation Program [20003540]
- GRDC Program through the National Research Foundation (NRF) - MSIT of Korea [NRF-2018K1A4A3079552]
- Kwangwoon University
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Annealing Ni/AlN/SiC heterojunction devices in an atmosphere of nitrogen and oxygen significantly improves the electrical properties of the structures, increasing the on/off ratio and decreasing the ideality factor. X-ray photoelectron spectroscopy provides direct indication of the bonding structure of the AlN layer.
It is shown in this work that annealing of Schottky barrier diodes (SBDs) in the form of Ni/AlN/SiC heterojunction devices in an atmosphere of nitrogen and oxygen leads to a significant improvement in the electrical properties of the structures. Compared to the non-annealed device, the on/off ratio of the annealed SBD devices increased by approximately 100 times. The ideality factor, derived from the current-voltage (IV) characterization, decreased by a factor of similar to 5.1 after annealing, whereas the barrier height increased from similar to 0.52 to 0.71 eV. The bonding structure of the AlN layer was characterized by X-ray photoelectron spectroscopy. Examination of the N 1 s and O 1 s peaks provided direct indication of the most prevalent chemical bonding states of the elements.
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