Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of similar to 2.1 cm(2) V-1 s(-1) and EQE of 1.6% at a luminance of 2600 cd m(-2). Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

Automated summary

Organic light-emitting field-effect transistors have the potential to simplify display pixel design, with p-type polymer heterostructure-based LEFET architecture showing promising results in improving charge injection and recombination efficiency. The device structure achieved a hole mobility of approximately 2.1 cm(2) V-1 s(-1) and an EQE of 1.6% at a luminance of 2600 cd m(-2), demonstrating advancements in polymer-based LEFET technology for new digital display applications.