Journal
MATERIALS
Volume 14, Issue 5, Pages -Publisher
MDPI
DOI: 10.3390/ma14051296
Keywords
gallium oxide; silicon carbide; static induction transistor; UV; ozone treatment
Categories
Funding
- Korea Institute of Energy Technology Evaluation and Planning [20194010000050]
- Industry & Energy (MOTIE, Korea)
- Korea Institute for Advancement of Technology (KIAT) - Korea Government (MOTIE) [P0012451]
- Kwangwoon University
- Korea Evaluation Institute of Industrial Technology (KEIT) [20194010000050] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In this study, static induction transistors (SITs) with beta gallium oxide (beta-Ga2O3) channels were grown on a p-epi silicon carbide (SiC) layer via radio frequency sputtering. The Ga2O3 films were treated with UV/ozone, producing reduced oxygen vacancies, lower surface roughness and resistivity, and higher mobility. The UV/O-3-treated SITs exhibited significantly higher drain current and on/off ratio compared to non-treated control devices.
In this study, static induction transistors (SITs) with beta gallium oxide (beta-Ga2O3) channels are grown on a p-epi silicon carbide (SiC) layer via radio frequency sputtering. The Ga2O3 films are subjected to UV/ozone treatment, which results in reduced oxygen vacancies in the X-ray photoelectron spectroscopy data, lower surface roughness (3.51 nm) and resistivity (319 omega center dot cm), and higher mobility (4.01 cm(2)V(-1)s(-1)). The gate leakage current is as low as 1.0 x 10(-11) A at V-GS = 10 V by the depletion layer formed between n-Ga2O3 and p-epi SiC at the gate region with a PN heterojunction. The UV/O-3-treated SITs exhibit higher (approximately 1.64 x 10(2) times) drain current (V-DS = 12 V) and on/off ratio (4.32 x 10(5)) than non-treated control devices.
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