4H-SiC Drift Step Recovery Diode with Super Junction for Hard Recovery

Silicon carbide (SiC) drift step recovery diode (DSRD) is a kind of opening-type pulsed power device with wide bandgap material. The super junction (SJ) structure is introduced in the SiC DSRD for the first time in this paper, in order to increase the hardness of the recovery process, and improve the blocking capability at the same time. The device model of the SJ SiC DSRD is established and its breakdown principle is verified. The effects of various structure parameters including the concentration, the thickness, and the width of the SJ layer on the electrical characteristics of the SJ SiC DSRD are discussed. The characteristics of the SJ SiC DSRD and the conventional SiC DSRD are compared. The results show that the breakdown voltage of the SJ SiC DSRD is 28% higher than that of the conventional SiC DSRD, and the dv/dt output by the circuit based on SJ SiC DSRD is 31% higher than that of conventional SiC DSRD. It is verified that the SJ SiC DSRD can achieve higher voltage, higher cut-off current and harder recovery characteristics than the conventional SiC DSRD, so as to output a higher dv/dt voltage on the load.

Automated summary

In this study, the super junction (SJ) structure is introduced in the silicon carbide drift step recovery diode (DSRD) for the first time, leading to enhanced recovery hardness and blocking capability. The SJ SiC DSRD exhibits 28% higher breakdown voltage and 31% higher dv/dt output compared to conventional SiC DSRD.