Journal
NATURE COMMUNICATIONS
Volume 12, Issue 1, Pages -Publisher
NATURE RESEARCH
DOI: 10.1038/s41467-021-21136-0
Keywords
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Categories
Funding
- European Union [825272]
- European Research Council through the Starting Grant MM's [277879]
- Graphene Flagship [785219, 881603]
- VINNOVA [2017-05108]
- VR [2015-05112]
- Swedish Foundation for Strategic Research (SSF) [GMT14-0071]
- German Ministry for Education and Research (BMBF) [GIMMIK 03XP0210]
- German Ministry for Economic Affairs and Energy (BMWi)
- European Social Fund in Germany (AachenCarbon) [FKZ: 03EFLNW199]
- China Scholarship Council (CSC)
- Graphene Flagship 2D Experimental Pilot Line (Acronym: 2D-EPL) [952792]
- Swedish Research Council [2015-05112] Funding Source: Swedish Research Council
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The study presents a generic methodology for large-area integration of 2D materials through adhesive wafer bonding, utilizing equipment, processes, and materials readily available in large-scale semiconductor manufacturing lines. This approach is suitable for back end of the line integration of 2D materials on top of integrated circuits, with the potential to accelerate progress in electronics, photonics, and sensing. Existing integration approaches for 2D materials often degrade material properties and are not compatible with industrial processing, highlighting the need for new strategies like adhesive wafer bonding.
Integrating two-dimensional (2D) materials into semiconductor manufacturing lines is essential to exploit their material properties in a wide range of application areas. However, current approaches are not compatible with high-volume manufacturing on wafer level. Here, we report a generic methodology for large-area integration of 2D materials by adhesive wafer bonding. Our approach avoids manual handling and uses equipment, processes, and materials that are readily available in large-scale semiconductor manufacturing lines. We demonstrate the transfer of CVD graphene from copper foils (100-mm diameter) and molybdenum disulfide (MoS2) from SiO2/Si chips (centimeter-sized) to silicon wafers (100-mm diameter). Furthermore, we stack graphene with CVD hexagonal boron nitride and MoS2 layers to heterostructures, and fabricate encapsulated field-effect graphene devices, with high carrier mobilities of up to 4520 cm2V-1s-1. Thus, our approach is suited for backend of the line integration of 2D materials on top of integrated circuits, with potential to accelerate progress in electronics, photonics, and sensing. The existing integration approaches for 2D materials often degrade material properties and are not compatible with industrial processing. Here, the authors devise an adhesive wafer bonding strategy to transfer and stack monolayers, suitable for back end of the line integration of 2D materials.
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