Journal
NATURE COMMUNICATIONS
Volume 12, Issue 1, Pages -Publisher
NATURE RESEARCH
DOI: 10.1038/s41467-021-20895-0
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Funding
- European Research Council (ERC) [614623]
- EPSRC [EP/K01711X/1, EP/K017144/1, EP/N010345/1, EP/L016087/1]
- EU
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Research on exciton-phonon coupling in single-layer transition metal dichalcogenides has shown stronger coupling compared to most other inorganic semiconductor nanostructures. Utilizing two-dimensional micro-spectroscopy, the study provides a unique tool to measure the characteristics of exciton-phonon coupling and design-relevant parameters for the development of optoelectronic devices.
Single-layer transition metal dichalcogenides are at the center of an ever increasing research effort both in terms of fundamental physics and applications. Exciton-phonon coupling plays a key role in determining the (opto)electronic properties of these materials. However, the exciton-phonon coupling strength has not been measured at room temperature. Here, we use two-dimensional micro-spectroscopy to determine exciton-phonon coupling of single-layer MoSe2. We detect beating signals as a function of waiting time induced by the coupling between A excitons and A(1) optical phonons. Analysis of beating maps combined with simulations provides the exciton-phonon coupling. We get a Huang-Rhys factor similar to 1, larger than in most other inorganic semiconductor nanostructures. Our technique offers a unique tool to measure exciton-phonon coupling also in other heterogeneous semiconducting systems, with a spatial resolution similar to 260nm, and provides design-relevant parameters for the development of optoelectronic devices.
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