4.8 Article

A superconducting switch actuated by injection of high-energy electrons

Journal

NATURE COMMUNICATIONS
Volume 12, Issue 1, Pages -

Publisher

NATURE PORTFOLIO
DOI: 10.1038/s41467-021-21231-2

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Funding

  1. European Research Commission [804273]
  2. European Research Council (ERC) [804273] Funding Source: European Research Council (ERC)

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Recent experiments suggest that superconductivity in metallic nanowires can be controlled by applying electric fields, with critical currents being tuned and eventually suppressed by small gate voltages. However, the mechanism behind critical current suppression remains controversial, with some proposing tunneling of high-energy electrons as a key factor. The onset of critical current suppression below 100fA gate currents presents challenges in typical experiments.
Recent experiments with metallic nanowires devices seem to indicate that superconductivity can be controlled by the application of electric fields. In such experiments, critical currents are tuned and eventually suppressed by relatively small voltages applied to nearby gate electrodes, at odds with current understanding of electrostatic screening in metals. We investigate the impact of gate voltages on superconductivity in similar metal nanowires. Varying materials and device geometries, we study the physical mechanism behind the quench of superconductivity. We demonstrate that the transition from superconducting to resistive state can be understood in detail by tunneling of high-energy electrons from the gate contact to the nanowire, resulting in quasiparticle generation and, at sufficiently large currents, heating. Onset of critical current suppression occurs below gate currents of 100fA, which are challenging to detect in typical experiments. A recent finding of tuning critical current in metallic nanowires by application of small gate voltages seems at odds with general understanding. Here, Ritter et al. study similar nanowires and link the origin of the critical current suppression to tunneling of few high-energy electrons between gate and nanowire, ruling out direct tuning by electric fields.

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