Journal
IEEE PHOTONICS JOURNAL
Volume 13, Issue 1, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2021.3054914
Keywords
Light-emitting diode; metasurface; finite-difference time-domain; deep ultraviolet
Funding
- SPDR program by RIKEN
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By optimizing the AlGaN metasurface and comparing different flip-chip structures, it is found that the combination of inclined sidewall and AlGaN metasurface can effectively improve the light-extraction efficiency of AlGaN-based deep-ultraviolet light-emitting diodes.
Herein, we investigate the influence of an AlGaN metasurface on AlGaN-based deep-ultraviolet light-emitting diodes' light-extraction efficiency by utilizing the 3D finite-difference time-domain method. As the first step in this study, we optimize an AlGaN metasurface to maximize the transmittance from LED to air. Then, six different flip-chip structures' light-extraction efficiencies are compared with each other to judge the usefulness of the metasurface's adoption on AlGaN-based LED. Considered structures are classified into two categories, with and without inclined sidewall, respectively. Each classified structure is subdivided again by three factors: flat interface, roughed cones, and metasurface on n-AlGaN. Extracted results show that the combination of inclined sidewall and the AlGaN metasurface shows synergetic results positively increasing light-extraction efficiency.
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