Evaluating the use of graphene electrodes in sub-micrometric, high-frequency n-type organic transistors

In this work we report on fully operational sub-micrometric low voltage OFETs by using graphene as the source-drain electrodes pair and a high-x ultra-thin dielectric in a local gate architecture. The impact of the graphene electrodes on the miniaturization of the organic devices has been assessed, with particular attention to the influence of the contact resistances as well as the parasitic overlap gate capacitance on the device bandwidth. By the use of a modified Transmission-Line-Method, contact resistances have been analyzed as function of the applied voltages, revealing characteristic functional trends that follow the doping state of graphene electrodes. Through impedance spectroscopy of the electrodes, cut-off frequencies as high as 10(5) Hz have been estimated, highlighting the peculiar role of quantum capacitance of graphene in such architectures.

Automated summary

This work reports on fully functional sub-micrometric low voltage OFETs using graphene as the source-drain electrodes pair and a high-x ultra-thin dielectric in a local gate architecture. The influence of graphene electrodes on the miniaturization of organic devices, contact resistances, and parasitic overlap gate capacitance on device bandwidth has been assessed. Impedance spectroscopy of the electrodes revealed cut-off frequencies as high as 10^5 Hz, emphasizing the unique role of graphene quantum capacitance in such architectures.