Deposition of Ti-Zr-O-N films by reactive magnetron sputtering of Zr target with Ti ribbons

In this work, we explore the addition of Ti ribbons on the racetrack of a Zr target to prepare Zr-O-N films including Ti, by reactive magnetron sputtering with a mixture of N-2 and O-2 as reactive gases. This approach is simple and not invasive, it avoids the modification of the target and minimizes its contamination. These films were compared in terms of chemical composition, density, film growth and crystallographic structure with others prepared in identical conditions without Ti ribbons. In addition, the composition and density of the films were correlated with crystallographic references from literature. The color and electrical properties of the films were evaluated as well. It was observed that poisoning of the Zr target is promoted by the increase of the N-2 + O-2 flow and the reduction of magnetron current, but it is retarded by the introduction of the Ti ribbons. This effect was particularly remarkable at lower target current, since the sputtering is confined in areas nearer to the racetrack, where the Ti ribbons are located. To account for the poisoning of the target and compare it among the different samples, a 'poisoning parameter' was defined, using a combination of the chemical composition of the films and the deposition rates. The color and electrical properties of the films correlate surprisingly well with their oxygen-to-metal ratio, while the concentration of N does not seem to play any significant role.

Automated summary

In this study, Zr-O-N films containing Ti were prepared by adding Ti ribbons on the racetrack of a Zr target during reactive magnetron sputtering. The addition of Ti ribbons prevented the target from being poisoned, especially at lower target currents, leading to a more controlled sputtering process. The color and electrical properties of the films were found to be closely related to the oxygen-to-metal ratio, while the N concentration did not have a significant impact.