The study of properties of blue-green InGaN/GaN multiple quantum wells grown at different pressures

In this work, blue-green InGaN/GaN multiple quantum wells (MQWs) were grown on SiC substrates by metal-organic chemical vapor deposition. The influence of growth pressure on the structural and optical properties and surface morphology of the MQWs was studied. The photoluminescence measurement results indicate that the indium content in the MQWs nearly doubles when the growth pressure increases from 100 to 400 mbar, and the MQWs grown at different pressures exhibit distinct temperature-dependent optical behaviors. Meanwhile, the growth pressure also influences the structural characteristics of the MQWs significantly. Besides, with changing the growth pressure, the surface root-mean-square roughness, V-shaped pits density, Vshaped pits size, and localization state density of the MQWs were changed accordingly.

Automated summary

In this study, blue-green InGaN/GaN multiple quantum wells were grown on SiC substrates by metal-organic chemical vapor deposition, and the influence of growth pressure on their structural and optical properties was investigated. It was found that increasing growth pressure nearly doubles the indium content in the MQWs and leads to distinct temperature-dependent optical behaviors. Furthermore, growth pressure significantly affects the structural characteristics of the MQWs, influencing surface morphology and defect density.