Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 36, Issue 4, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1361-6641/abe5fd
Keywords
aluminum nitride; gallium nitride; millimeter-wave; nitride CMOS; GaN HEMT
Categories
Funding
- Semiconductor Research Corporation (SRC)
- Intel Corporation
- AFOSR [FA9550-20-1-0148]
- NSF DMR [1710298]
- NSF [ECCS-1542081]
- NSF MRSEC [DMR-1719875]
- Joint University Microelectronics Program (JUMP)
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The shift to the aluminum nitride platform offers smarter, highly-scaled heterostructure design to improve the performance of III-nitride amplifiers, enabling maximum high-power, high-speed potential for mm-wave communication and high-power logic applications.
Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also comes at a point at which the standard GaN heterostructures remain unoptimized for maximum performance. For this reason, we propose the shift to the aluminum nitride (AlN) platform. AlN allows for smarter, highly-scaled heterostructure design that will improve the output power and thermal management of III-nitride amplifiers. Beyond improvements over the incumbent amplifier technology, AlN will allow for a level of integration previously unachievable with GaN electronics. State-of-the-art high-current p-channel FETs, mature filter technology, and advanced waveguides, all monolithically integrated with an AlN/GaN/AlN HEMT, is made possible with AlN. It is on this new AlN platform that nitride electronics may maximize their full high-power, high-speed potential for mm-wave communication and high-power logic applications.
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