Chiral-induced spin selectivity enables a room-temperature spin light-emitting diode

In traditional optoelectronic approaches, control over spin, charge, and light requires the use of both electrical and magnetic fields. In a spin-polarized light-emitting diode (spin-LED), charges are injected, and circularly polarized light is emitted from spin-polarized carrier pairs. Typically, the injection of carriers occurs with the application of an electric field, whereas spin polarization can be achieved using an applied magnetic field or polarized ferromagnetic contacts. We used chiral-induced spin selectivity (CISS) to produce spin-polarized carriers and demonstrate a spin-LED that operates at room temperature without magnetic fields or ferromagnetic contacts. The CISS layer consists of oriented, self-assembled small chiral molecules within a layered organic-inorganic metal-halide hybrid semiconductor framework. The spin-LED achieves +/- 2.6% circularly polarized electroluminescence at room temperature.

Automated summary

Traditional optoelectronic approaches rely on both electrical and magnetic fields to control spin, charge, and light, while the use of chiral-induced spin selectivity (CISS) technology allows for the fabrication of a spin-LED that operates at room temperature without the need for magnetic fields or ferromagnetic contacts.