4.5 Article

Cryogenic GaAs high-electron-mobility-transistor amplifier for current noise measurements

Journal

REVIEW OF SCIENTIFIC INSTRUMENTS
Volume 92, Issue 2, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/5.0036419

Keywords

-

Funding

  1. JST PRESTO [JP16H06009, JP19H05603, JP15H05854, JP19H05826, JP19H00656]
  2. RIEC, Tohoku University [JP17940407]

Ask authors/readers for more resources

This study demonstrates the suitability of a homemade GaAs HEMT amplifier for current-noise measurements in mesoscopic devices at dilution-refrigerator temperatures. The lower noise characteristics of the homemade HEMT allow for a lower noise floor in the experimental setup and more efficient current-noise measurement compared to commercial HEMTs. The high resolution of the measurement setup is showcased by comparing it with a conventional one using a commercial HEMT.
We show that a cryogenic amplifier composed of a homemade GaAs high-electron-mobility transistor (HEMT) is suitable for current-noise measurements in a mesoscopic device at dilution-refrigerator temperatures. The lower noise characteristics of our homemade HEMT lead to a lower noise floor in the experimental setup and enable more efficient current-noise measurement than is available with a commercial HEMT. We present the dc transport properties of the HEMT and the gain and noise characteristics of the amplifier. With the amplifier employed for current-noise measurements in a quantum point contact, we demonstrate the high resolution of the measurement setup by comparing it with that of the conventional one using a commercial HEMT.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.5
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available